Qualification and Reliability of a GaN Process Platform

نویسندگان

  • S. Singhal
  • A. W. Hanson
  • A. Chaudhari
  • P. Rajagopal
  • T. Li
  • J. W. Johnson
  • W. Nagy
  • R. Therrien
  • C. Park
  • A. P. Edwards
  • E. L. Piner
  • K. J. Linthicum
  • I. C. Kizilyalli
چکیده

Abstract In this paper, the qualification of a production GaN process platform is discussed. Details of the process repeatability, reliability and qualification methodologies are covered in detail. Additionally, concurrent product development efforts are also described. Reliability results include three-temperature DC testing that resulted in an activation energy of 2.0eV and DCHTOL testing demonstrating 20-yr drift rates of less than 3% when operated at 150°C.

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تاریخ انتشار 2007